1 April 2013 Resist outgassing contamination growth results using both photon and electron exposures
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Abstract
During exposure in an EUV scanner, photoresist and other materials coated on a wafer are known to outgas various species. As a requirement to pattern materials in an ASML NXE scanner, these materials need to be screened for outgassing and possible optics contamination. As part of the testing process, a resist-coated wafer is exposed in a vacuum chamber mimicking the conditions inside an EUV scanner. The resist exposure source can be either EUV photons or electron beam (e-beam). This presentation will cover the results to date on a SEMATECH program to study resist outgassing from both the commercial system from EUV Tech and a custom Resist Outgassing and Exposure (ROX) tool. The EUV Tech results reported will be based on electron exposures of the photoresist, and the ROX results reported will be based on EUV photon exposures of the photoresist. The results reported will cover both tools and the measurements of over 80 commercial photoresists.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gregory Denbeaux, Gregory Denbeaux, Yudhishthir Kandel, Yudhishthir Kandel, Genevieve Kane, Genevieve Kane, Diego Alvardo, Diego Alvardo, Mihir Upadhyaya, Mihir Upadhyaya, Yashdeep Khopkar, Yashdeep Khopkar, Alexander Friz, Alexander Friz, Karen Petrillo, Karen Petrillo, Jaewoong Sohn, Jaewoong Sohn, Chandra Sarma, Chandra Sarma, Dominic Ashworth, Dominic Ashworth, } "Resist outgassing contamination growth results using both photon and electron exposures", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86790L (1 April 2013); doi: 10.1117/12.2011606; https://doi.org/10.1117/12.2011606
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