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1 April 2013 Evaluation of methods to improve EUV OPC model accuracy
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Several methods are evaluated to improve the accuracy of extreme ultraviolet (EUV) lithography OPC models by including additional physical effects which are not commonly used in deep ultraviolet (DUV) OPC. The primary additions to the model in this work are model based corrections for flare and two different corrections for mask shadowing effects, commonly referred to as HV bias. The quantitative, incremental, improvement from each of these additions is reported, and the resulting changes in tape-out flow and OPC runtime are discussed
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tamer H.. Coskun, Chris Clifford, Germain Fenger, Gek Soon Chua, Keith Standiford, Ralph Schlief, Craig Higgins, and Yi Zou "Evaluation of methods to improve EUV OPC model accuracy", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86790V (1 April 2013);


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