Translator Disclaimer
1 April 2013 Fast 3D thick mask model for full-chip EUVL simulations
Author Affiliations +
Extreme ultraviolet lithography (EUVL) uses a 13.5nm exposure wavelength, all-reflective projection optics, and a reflective mask under an oblique illumination with a chief ray angle of about 6 degrees to print device patterns. This imaging configuration leads to many challenges related to 3D mask topography. In order to accurately predict and correct these problems, it is important to use a 3D mask model in full-chip EUVL applications such as optical proximity correction (OPC) and verifications. In this work, a fast approximate 3D mask model developed previously for full-chip deep ultraviolet (DUV) applications is extended and greatly enhanced for EUV applications and its accuracy is evaluated against a rigorous 3D mask model.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peng Liu, Xiaobo Xie, Wei Liu, and Keith Gronlund "Fast 3D thick mask model for full-chip EUVL simulations", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86790W (1 April 2013);


EUV OPC for the 20-nm node and beyond
Proceedings of SPIE (March 22 2012)
AIMS D2DB simulation for DUV and EUV mask inspection
Proceedings of SPIE (April 16 2012)
Rigorous simulation of defective EUV multilayer masks
Proceedings of SPIE (December 16 2003)
OPC modeling and correction solutions for EUV lithography
Proceedings of SPIE (October 13 2011)

Back to Top