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1 April 2013 Resist process applications to improve EUV patterning
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Abstract
Roughness control is a key technical issue in extreme ultraviolet (EUV) lithography. It applies to both line and space (L/S) and contact hole (C/H) structures. Recently, SEMATECH and Tokyo Electron Limited (TEL) developed several track-based techniques, including developer optimization, FIRM™ (Finishing up by Improved Rinse Material), and smoothing to reduce structural roughness. The combination of these techniques improved line width roughness (LWR) about 25% from the 2011 baseline of 32 nm L/S. C/H structures were also tested with the combination process. This paper describes our latest L/S and C/H roughness performance post-lithography and postetch. A feasibility study of negative tone develop (NTD) resists for EUV is also included.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Karen Petrillo, Kyoungyoung Cho, Alexander Friz, Cecilia Montgomery, Dominic Ashworth, Mark Neisser, Stefan Wurm, Takashi Saito, Lior Huli, Akiteru Ko, and Andrew Metz "Resist process applications to improve EUV patterning", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 867911 (1 April 2013); https://doi.org/10.1117/12.2011566
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