Resist process applications to improve EUV patterning

Karen Petrillo; Kyoungyoung Cho; Alexander Friz; Cecilia Montgomery; Dominic Ashworth; Mark Neisser; Stefan Wurm; Takashi Saito; Lior Huli; Akiteru Ko; Andrew Metz

doi:10.1117/12.2011566

1 April 2013 Resist process applications to improve EUV patterning

Karen Petrillo, Kyoungyoung Cho, Alexander Friz, Cecilia Montgomery, Dominic Ashworth, Mark Neisser, Stefan Wurm, Takashi Saito, Lior Huli, Akiteru Ko, Andrew Metz

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Proceedings Volume 8679, Extreme Ultraviolet (EUV) Lithography IV; 867911 (2013) https://doi.org/10.1117/12.2011566
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

Roughness control is a key technical issue in extreme ultraviolet (EUV) lithography. It applies to both line and space (L/S) and contact hole (C/H) structures. Recently, SEMATECH and Tokyo Electron Limited (TEL) developed several track-based techniques, including developer optimization, FIRM™ (Finishing up by Improved Rinse Material), and smoothing to reduce structural roughness. The combination of these techniques improved line width roughness (LWR) about 25% from the 2011 baseline of 32 nm L/S. C/H structures were also tested with the combination process. This paper describes our latest L/S and C/H roughness performance post-lithography and postetch. A feasibility study of negative tone develop (NTD) resists for EUV is also included.

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Karen Petrillo, Karen Petrillo, Kyoungyoung Cho, Kyoungyoung Cho, Alexander Friz, Alexander Friz, Cecilia Montgomery, Cecilia Montgomery, Dominic Ashworth, Dominic Ashworth, Mark Neisser, Mark Neisser, Stefan Wurm, Stefan Wurm, Takashi Saito, Takashi Saito, Lior Huli, Lior Huli, Akiteru Ko, Akiteru Ko, Andrew Metz, Andrew Metz, } "Resist process applications to improve EUV patterning", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 867911 (1 April 2013); doi: 10.1117/12.2011566; https://doi.org/10.1117/12.2011566

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