1 April 2013 Relationship between stochastic effect and resist pattern defect in extreme ultraviolet lithography
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Abstract
With the approach of extreme ultraviolet (EUV) lithography to its realization, practical issues such as the defects of resist patterns have attracted attention. In this study, the defects of line-and-space resist patterns were investigated from the viewpoint of the stochastic effects of chemical reactions. The stochastic effect was expressed using the standard deviation σ of protected unit concentration. To eliminate bridges within ~7 μm length in the line direction, roughly 1-2σ difference is required between average protected unit concentration and dissolution point at the center of space. To eliminate line breaks and severe shrinkages within ~7 μm length in the line direction, roughly 1σ difference is required between average protected unit concentration and dissolution point at the center of resist line pattern.
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Takahiro Kozawa, Julius Joseph Santillan, Toshiro Itani, "Relationship between stochastic effect and resist pattern defect in extreme ultraviolet lithography", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 867913 (1 April 2013); doi: 10.1117/12.2011240; https://doi.org/10.1117/12.2011240
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