1 April 2013 Mask effects for high-NA EUV: impact of NA, chief-ray-angle, and reduction ratio
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With higher NA (≫ 0.33) and increased chief-ray-angles, mask effects will significantly impact the overall scanner performance. We discuss these effects in detail, paying particular attention to the multilayer-absorber interaction, and show that there is a trade-off between image quality and reticle efficiency. We show that these mask effects for high NA can be solved by employing a reduction ratio <4X, and show several options for a high-NA optics. Carefully discussing the feasibility of these options is an important part of defining a high-NA EUV tool.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jens Timo Neumann, Jens Timo Neumann, Paul Gräupner, Paul Gräupner, Winfried Kaiser, Winfried Kaiser, Reiner Garreis, Reiner Garreis, Bernd Geh, Bernd Geh, "Mask effects for high-NA EUV: impact of NA, chief-ray-angle, and reduction ratio", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 867915 (1 April 2013); doi: 10.1117/12.2011455; https://doi.org/10.1117/12.2011455


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