1 April 2013 Mask effects for high-NA EUV: impact of NA, chief-ray-angle, and reduction ratio
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Abstract
With higher NA (≫ 0.33) and increased chief-ray-angles, mask effects will significantly impact the overall scanner performance. We discuss these effects in detail, paying particular attention to the multilayer-absorber interaction, and show that there is a trade-off between image quality and reticle efficiency. We show that these mask effects for high NA can be solved by employing a reduction ratio <4X, and show several options for a high-NA optics. Carefully discussing the feasibility of these options is an important part of defining a high-NA EUV tool.
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Jens Timo Neumann, Jens Timo Neumann, Paul Gräupner, Paul Gräupner, Winfried Kaiser, Winfried Kaiser, Reiner Garreis, Reiner Garreis, Bernd Geh, Bernd Geh, "Mask effects for high-NA EUV: impact of NA, chief-ray-angle, and reduction ratio", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 867915 (1 April 2013); doi: 10.1117/12.2011455; https://doi.org/10.1117/12.2011455
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