1 April 2013 Towards manufacturing a 10nm node device with complementary EUV lithography
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For device manufacturing at the 10nm node (N10) and below, EUV lithography is one of the technology options to achieve the required resolution. Besides high throughput and extreme resolution, excellent wafer CD, overlay and defect control are also required. In this paper, we discuss two wafer CD uniformity issues, the effect of the reticle black border and photon shot noise. The readiness of EUV lithography for N10 will be discussed by showing on-product imaging and overlay performance of a self aligned via layer inserted with EUV lithography. EUV single patterning results will be discussed by comparing the imaging performance of our NXE:3100 cluster to the NXE:3300 at ASML. Last but not least, the extendibility of EUV lithography towards sub 10nm patterning will be discussed by demonstrating sub 10nm half pitch LS patterns with EUV single Self Aligned Double Patterning (SADP).
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jan V. Hermans, Jan V. Hermans, Huixiong Dai, Huixiong Dai, Ardavan Niroomand, Ardavan Niroomand, David Laidler, David Laidler, Ming Mao, Ming Mao, Yongmei Chen, Yongmei Chen, Philippe Leray, Philippe Leray, Chris Ngai, Chris Ngai, Shaunee Cheng, Shaunee Cheng, "Towards manufacturing a 10nm node device with complementary EUV lithography", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86791K (1 April 2013); doi: 10.1117/12.2012136; https://doi.org/10.1117/12.2012136

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