1 April 2013 Limitation of OAI + AttPSM in EUVL
Author Affiliations +
Abstract
In extreme ultraviolet lithography (EUVL), the application of off-axis illumination (OAI) leads to degradation in aerial image contrast, resulting in an unacceptably high mask error enhancement factor as the pattern pitch becomes smaller, even if an attenuated phase-shifting mask (AttPSM) of optimized attenuation is employed. We show that this is an intrinsic problem of OAI and cannot be remedied by adopting a thinner absorber, a smaller chief ray angle of incidence at the object side, or a projection optics box with a higher numerical aperture. Based on simulation results using the best conditions for OAI, we may conclude that single-patterning EUVL will probably end at a technology node with the minimum pitch of 22 nm, unless we can come up with other innovative ways for performing EUVL imaging or designing and formulating resists with blurs less than 5 nm at reasonable exposure dose.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shinn-Sheng Yu, Shinn-Sheng Yu, Yen-Cheng Lu, Yen-Cheng Lu, Chih-Tsung Shih, Chih-Tsung Shih, Jack J. H. Chen, Jack J. H. Chen, Anthony Yen, Anthony Yen, } "Limitation of OAI + AttPSM in EUVL ", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86791L (1 April 2013); doi: 10.1117/12.2010943; https://doi.org/10.1117/12.2010943
PROCEEDINGS
8 PAGES


SHARE
RELATED CONTENT


Back to Top