1 April 2013 Evaluation of novel projection electron microscopy (PEM) optics for EUV mask inspection
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Abstract
In order to achieve inspection sensitivity and a attainability for 1× node, a projection electron microscopy (PEM) system is employed that enables us to do high-speed/ high-resolution inspection that is not possible with the conventional DUV and EB inspection systems. By selecting a higher electron energy in imaging using Electron Optics (EO) exposure, and by applying a newly designed model to the basic PEM optics model, we have minimized the aberration in imaging that occurs when working with EO; and we have improved the related transmittance of such a system. The experimental result by showing designs for the improved transmittance, is obtained by making electron throughput measurement.
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Ryoichi Hirano, Ryoichi Hirano, Susumu Iida, Susumu Iida, Tsuyoshi Amano, Tsuyoshi Amano, Tsuneo Terasawa, Tsuneo Terasawa, Hidehiro Watanabe, Hidehiro Watanabe, Kenji Terao, Kenji Terao, } "Evaluation of novel projection electron microscopy (PEM) optics for EUV mask inspection", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86791T (1 April 2013); doi: 10.1117/12.2010615; https://doi.org/10.1117/12.2010615
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