1 April 2013 A reverse design method for EUV lithography illumination system
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Abstract
Few design method for Extreme Ultraviolet (EUV) lithography illumination system has been proposed in the past years. In this paper, we developed a design method for the illuminator with all the components in the system designed in a reverse sequence. Some key issues about the design of relay system and the configuration of the fly’s eye will be discussed in detail. An illuminator for numerical aperture 0.3 lithography has been designed with the method developed in this paper. Design result shows the slit uniformity of the scanning energy distribution can reach 1.2% under 90-degree dipole illumination, 45-degree quadrupole illumination and annular illumination.
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Qiuli Mei, Qiuli Mei, Yanqiu Li, Yanqiu Li, Fei Liu, Fei Liu, } "A reverse design method for EUV lithography illumination system", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 867923 (1 April 2013); doi: 10.1117/12.2011290; https://doi.org/10.1117/12.2011290
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