1 April 2013 Patterning at 6.5 nm wavelength using interference lithography
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Abstract
We present the results of patterning chemically-amplified and inorganic resists at 6.5 nm wavelength using interference lithography. Well-resolved patterns down to 22 nm HP are obtained. Dose-dependent line-edge roughness and critical dimensions in the resolution range of 50-22 nm half-pitch are obtained using 13.5 and 6.5 nm wavelength. The performances of the resists are compared for both cases. Increased line-edge roughness is observed for patterning 6.5 nm compared to the patterning at 13.5 nm wavelength.
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Nassir Mojarad, Nassir Mojarad, Michaela Vockenhuber, Michaela Vockenhuber, Li Wang, Li Wang, Bernd Terhalle, Bernd Terhalle, Yasin Ekinci, Yasin Ekinci, } "Patterning at 6.5 nm wavelength using interference lithography", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 867924 (1 April 2013); doi: 10.1117/12.2011556; https://doi.org/10.1117/12.2011556
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