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1 April 2013 Reaction mechanisms of various chemically amplified EUV and EB resist
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We synthesized three type polymers 1) Poly hydroxyl-styrene (PHS resist). 2) hydroxyl-styrene methacrylate copolymer (Hybrid resist). 3) methacrylic acid tertiary aliphatic esters copolymer (Methacrylate resist). These polymers have been used in ArF, KrF lithography. Recently, these resists have been investigated to employ for Extreme ultra violet (EUV) lithography because absorption of EUV doesn’t depend on the molecular structure. But EUV has very higher energy than ArF, KrF and it is exceed ionization potential of resist materials. Thus, polymer behavior under the EUV exposure is different from ArF, KrF exposure. For analyzing difference between ArF, KrF and EUV, we conducted to exposed resist materials (PHS, Hybrid, Methacrylate resist) using electron beam (EB) radiation source. As the results, we observed PHS resist showed crosslinking behavior less than 5μ C/cm2 , Hybrid resist showed cross-linking behavior more than 20μ C/cm2, Methacrylate resist showed moderate main chain scission behavior less than 20μ C/cm2 respectively.
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Satoshi Enomoto, Akihiro Oshima, and Seiichi Tagawa "Reaction mechanisms of various chemically amplified EUV and EB resist", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86792C (1 April 2013);

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