8 April 2013 Resist outgassing characterization based on the resist compositions and process
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Abstract
For extreme ultraviolet (EUV) lithography, some critical issues concerning possible tool optics contamination due to resist outgassing remain to be resolved [1-4]. Before resists can be used on the ASML NXE:3100 and ASML NXE:3300 EUV scanners, they need to be tested in dedicated equipment and qualify according to the ASML NXE outgassing guidelines. In view of these guidelines, EIDEC has been working on an infrastructure set-up to enable resist outgassing testing. However, further investigations are still necessary to realize the application of the proposed outgassing evaluation method. Moreover, given the significant number of resists to be tested, fundamental studies to established concepts that reduce the number of resist outgassing tests are necessary. The application of these concepts focused on resist outgassing characterization based on resist composition and processes is presented. Moreover, a suggestion on how this fundamental information can be applied to reduce the total number of resist outgassing tests required for various EUV resists is discussed.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Norihiko Sugie, Norihiko Sugie, Toshiya Takahashi, Toshiya Takahashi, Kazuhiro Katayama, Kazuhiro Katayama, Isamu Takagi, Isamu Takagi, Yukiko Kikuchi, Yukiko Kikuchi, Hiroyuki Tanaka, Hiroyuki Tanaka, Eishi Shiobara, Eishi Shiobara, Soichi Inoue, Soichi Inoue, } "Resist outgassing characterization based on the resist compositions and process", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86792E (8 April 2013); doi: 10.1117/12.2011637; https://doi.org/10.1117/12.2011637
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