Translator Disclaimer
8 April 2013 Collector optic in-situ Sn removal using hydrogen plasma
Author Affiliations +
The presence of Sn on the collector optic of an extreme ultraviolet (EUV) light lithography tool continues to be a concern for source manufacturers. A mere nanometers deposition results in reduction of EUV light reflectivity to unacceptable levels. It has been shown previously that hydrogen radical etching of Sn provides a promising technique for in-situ cleaning of the collector optic. One concern in this technique is the redeposition by radicalized SnH4 breaking apart after making contact with a surface. To address this concern, large scale etching measurements were made using a metallic antenna as the substrate. Optimized etch rates approaching 7.5±1 nm/min have been achieved with a flow rate of 500 sccm at a pressure of 80 mTorr. The effect of variations in the Sn cleaning environment will be investigated with respect to temperature increases as well as air, oxygen, and methane contamination gasses. Furthermore, the effect of Sn located away from the cleaning location will also be presented.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John R. Sporre, Dan Elg, David N. Ruzic, Shailendra N. Srivastava, Igor V. Fomenkov, and David C. Brandt "Collector optic in-situ Sn removal using hydrogen plasma", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86792H (8 April 2013);


Collector optic cleaning by in-situ hydrogen plasma
Proceedings of SPIE (April 06 2015)
Study of ion enhanced Sn removal by surface wave plasma...
Proceedings of SPIE (January 01 1900)
Study of Sn removal by surface wave plasma for source...
Proceedings of SPIE (March 24 2017)
FIB mask repair technology for EUV mask
Proceedings of SPIE (May 11 2009)
In-situ Sn contamination removal by hydrogen plasma
Proceedings of SPIE (March 23 2012)
Sn debris cleaning by plasma in DPP EUV source systems...
Proceedings of SPIE (March 19 2010)

Back to Top