1 April 2013 Impact of EUV mask roughness on lithography performance
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Abstract
The influence of surface roughness of an EUV mask on wafer image has been thoroughly investigated by lithography simulation with the Monte Carlo method. Based on the power spectral density of the surface roughness of an actual mask, and based on a given random phase distribution, we have reconstructed a number of rough surfaces with various rms roughness values. We quantitatively estimated the impacts of these reconstructed rough surfaces on wafer images. Furthermore, we also investigated the influence of phase defects formed on the rough surfaces. We then did the process margin analysis that showed the specifications of the surface roughness.
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Yukiyasu Arisawa, Yukiyasu Arisawa, Tsuneo Terasawa, Tsuneo Terasawa, Hidehiro Watanabe, Hidehiro Watanabe, } "Impact of EUV mask roughness on lithography performance", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86792S (1 April 2013); doi: 10.1117/12.2011635; https://doi.org/10.1117/12.2011635
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