EUV lithography (EUVL) is the leading candidate for the manufacture of devices with 1× nm node and beyond.
However, many challenges remain for the industry to understand clearly and to overcome before EUVL will be ready for
application in volume production. Efforts have been made to improve the various critical components of EUVL, such as
light source, exposure tool, mask, resist material, and so on.[1,2] Among these, resist materials are considered as one of the most critical issues in realizing EUVL.[3,4] Coat-develop track system overcame several challenges for each traditional resist system (i.e. i-line, KrF ArF, and ArF immersion). EUV resist system requires ultra thin organic film coating. The under-layer thickness is below 10nm and the resist thickness is about 40nm, however, in some cases film thickness is smaller than the diameter of particles on the substrate, even if the particle size is smaller than the detection limit of defect inspection tool. Also EUV resist patterning becomes extremely small pattern pitch. It leads the difficulty of CD control because the resist solubility in develop processing depends on resist type. Some resists were significantly swelled during develop process. Swelling depends on develop time and developer materials. That behavior on EUV resist system is becoming evident. Furthermore, LWR
improvement on track processing is required. During the conference, we will discuss how to coat the substrate with ultra thin film and how to control resist dissolution to improve CD uniformity and LWR. Additionally, we will show the latest lithographic results obtained with the novel application for EUV coat-develop track system.