8 April 2013 The need for EUV lithography at advanced technology for sustainable wafer cost
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Extreme Ultra-Violet lithography (EUVL) is considered as the most promising candidate to replace optical lithography from the 14nm technology node onwards. EUVL has recently been supplanted by multiple patterning using existing 193nm immersion lithography tools for upcoming 14 nm technology node due to the current resolution limitations and production level efficiency restrictions. In this paper, a wafer cost model for technology node from 28nm down to 14nm has been developed. It identifies lithography module as the key component where innovation can be leveraged to reduce cost. The results presented in the paper reveal that wafer cost will be increased by 30% from 28nm to 20nm technology node. A 70% increase in wafer cost is foreseen during a transition from 20nm to 14nm node based on 193nm immersion lithography and multiple patterning. The cost analysis predicts a 30% wafer cost reduction by adapting EUVL at a 14 nm technology node compared to 193nm immersion technology (normalized to 28nm wafer cost). It proves that the readiness of EUVL is critical to keep scale the logic devices at the pace of Moore’s law without violating the scale of economics in semiconductor industry.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Arindam Mallik, Arindam Mallik, Wim Vansumere, Wim Vansumere, Julien Ryckaert, Julien Ryckaert, Abdelkarim Mercha, Abdelkarim Mercha, Naoto Horiguchi, Naoto Horiguchi, Steven Demuynck, Steven Demuynck, Jürgen Bömmels, Jürgen Bömmels, Tokei Zsolt, Tokei Zsolt, Geert Vandenberghe, Geert Vandenberghe, Kurt Ronse, Kurt Ronse, Aaron Thean, Aaron Thean, Diederik Verkest, Diederik Verkest, Hans Lebon, Hans Lebon, An Steegen, An Steegen, "The need for EUV lithography at advanced technology for sustainable wafer cost", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86792Y (8 April 2013); doi: 10.1117/12.2011528; https://doi.org/10.1117/12.2011528

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