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1 April 2013 The study of novel PAG containing acid amplifier in EUV resist material
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The minimum target specificatons of EUV resist material are the Resoultion ≤ 22nm half pitch L/S, Line Width Roughness ≤ 1.7nm, and Sensitivity 10mJ~15mJ[1]. The major pending issue of EUV resist is how to simultaneously achieve high sensitivity, high resolution and low LWR.[12] Especially, LWR[2] is the main issue among above RLS performances. Thus, we have measured acid diffusion length of blend type PAG and Polymer bound PAG in order to confirm the fact that the acid diffusion length of Polymer Bound PAG type is shorter than that of blend type PAG. With the results of these experiments, we could determine polymer bound PAG as polymer platform for EUV resist material. We have also researched about acid labile group to improve the sensitivity of EUV resist with introduction of various kinds of monomers and we have tried to develop novel acid amplifier to get a good acid yield. Additionally, we have also studied the effects of steric hinderance through diversifying the size of pendent group to make polymer of high performance. In this paper, we will discuss the results of these studies obtained by EUV tools.
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Hyun Sang Joo, Jin Ho Kim, Joon Hee Han, Chang Wan Bae, Jin Bong Shin, Hyun Soon Lim, Seung Duk Cho, and Sam Min Kim "The study of novel PAG containing acid amplifier in EUV resist material", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86792Z (1 April 2013);


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