1 April 2013 Effect of cleaning on EUV masks
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A major difference between EUV lithography and its conventional optical predecessors is the lack of a usable pellicle. No material has been found that is both transmissive at the EUV lithography wavelength of 13.5nm and that has sufficient structural integrity to serve as a pellicle. Therefore, during exposure to EUV light the mask is unprotected and accretes particles. This necessitates repeated cleanings of the mask, which raises concerns about changes in the mask induced by the cleaning process. It is only through metrology that these concerns can be addressed. This paper describes an optical characterization method to determine the effect of cleaning an EUV mask.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeffrey W. Roberts, Jeffrey W. Roberts, } "Effect of cleaning on EUV masks", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 867937 (1 April 2013); doi: 10.1117/12.2022472; https://doi.org/10.1117/12.2022472


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