Paper
26 March 2013 Healing LER using directed self assembly: treatment of EUVL resists with aqueous solutions of block copolymers
Author Affiliations +
Abstract
Overcoming the resolution-LER-sensitivity trade-off is a key challenge for the development of novel resists and processes that are able to achieve the ITRS targets for future lithography nodes. Here, we describe a process that treats lithographic patterns with aqueous solutions of block copolymers to facilitate a reduction in LER. A detailed understanding of parameters affecting adhesion and smoothing is gained by first investigating the behavior of the polymers on planar smooth and rough surfaces. Once healing was established in these model systems the methodology is tested on lithographically printed features where significant healing is observed, making this a promising technology for LER remediation.
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Ya-Mi Chuang, Han-Hao Cheng, Kevin Jack, Andrew Whittaker, and Idriss Blakey "Healing LER using directed self assembly: treatment of EUVL resists with aqueous solutions of block copolymers", Proc. SPIE 8680, Alternative Lithographic Technologies V, 868009 (26 March 2013); https://doi.org/10.1117/12.2012488
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CITATIONS
Cited by 2 scholarly publications and 6 patents.
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KEYWORDS
Polymers

Annealing

Line edge roughness

Lithography

Semiconducting wafers

Directed self assembly

Atomic force microscopy

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