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26 March 2013 Defect source analysis of directed self-assembly process (DSA of DSA)
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As design rule shrinks, it is essential that the capability to detect smaller and smaller defects should improve. There is considerable effort going on in the industry to enhance Immersion Lithography using DSA for 14 nm design node and below. While the process feasibility is demonstrated with DSA, material issues as well as process control requirements are not fully characterized. The chemical epitaxy process is currently the most-preferred process option for frequency multiplication and it involves new materials at extremely small thickness. The image contrast of the lamellar Line/Space pattern at such small layer thickness is a new challenge for optical inspection tools. In this investigation, the focus is on the capability for optical inspection systems to capture DSA unique defects such as dislocations and disclination clusters over the system and wafer noise. The study is also extended to investigate wafer level data at multiple process steps and determining contribution from each process step and materials using ‘Defect Source Analysis’ methodology. The added defect pareto and spatial distributions of added defects at each process step are discussed.
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Paulina Rincon Delgadillo, Ryota Harukawa, Mayur Suri, Stephane Durant, Andrew Cross, Venkat R. Nagaswami, Dieter Van Den Heuvel, Roel Gronheid, and Paul Nealey "Defect source analysis of directed self-assembly process (DSA of DSA)", Proc. SPIE 8680, Alternative Lithographic Technologies V, 86800L (26 March 2013);

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