26 March 2013 Deterministically isolated gratings through the directed self-assembly of block copolymers
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Abstract
Pattern customization is a necessary requirement to achieve circuit-relevant patterns using block copolymer directed self-assembly (DSA), but the edge-placement error associated with customization steps after DSA is anticipated to be at the scale of the pattern features, particularly as a result of overlay error. Here we present a new self-aligned approach to the customization of line-space patterns fabricated through chemical epitaxy. A partially inorganic chemical pattern contains a prepattern with pinning lines and non-guiding “blockout” features to which the block copolymer domains are aligned. Pattern transfer results in a line-space pattern with self-aligned customizations directly determined by the prepattern. In the transferred pattern, pinning lines determine the placement of single-line gaps while blockout features determine the placement and size of perpendicular trim across lines. By using designed two-dimensional chemical patterns, this self-aligned, bidirectional customization scheme enables the fabrication of high-resolution circuit-relevant patterns with fewer trim/exposure steps.
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Gregory S. Doerk, Gregory S. Doerk, Joy Y. Cheng, Joy Y. Cheng, Charles T. Rettner, Charles T. Rettner, Srinivasan Balakrishnan, Srinivasan Balakrishnan, Noel Arellano, Noel Arellano, Daniel P. Sanders, Daniel P. Sanders, } "Deterministically isolated gratings through the directed self-assembly of block copolymers", Proc. SPIE 8680, Alternative Lithographic Technologies V, 86800Y (26 March 2013); doi: 10.1117/12.2011629; https://doi.org/10.1117/12.2011629
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