Abstract
Directed self-assembly (DSA) process of block copolymers (BCPs) has been considered as a candidate for sub-20nm
contact patterning. In recent years the semiconductor manufacturers have been interested in use DSA in production. DSA
is based on the intrinsic property of the BCPs which is phase-separation in the molecular scale, but significant problems
remain for device application. Process time, high process temperature, defect, and CD distribution make the using of
DSA difficult in mass production. One of the most considered problems for DSA is the CD Distribution. A guide
material for grapho-epitaxy DSA process requires resistance against high temperature and solvent. We use negative tone
develop (NTD) photoresist (PR) guide for simple process and thermal resistance, and additional treatment for resistance
against high temperature and solvent. The CD distribution of DSA is highly related to the phase separation itself. In
order to get better performance, the polymer chains should have sufficient mobility under heating above their glass
temperature. Therefore, film thickness and molecular weight of BCPs are very important parameters for CD distribution
of DSA process. From the results, it is proven that guide materials, film thickness of BCPs, and molecular weight of
BCPs are significant parameter in order to improve CD distribution of DSA patterns.
