0.1-nanometer resolution positioning stage for sub-10 nm scanning probe lithography

Nataliya Vorbringer-Doroshovets; Felix Balzer; Roland Fuessl; Eberhard Manske; Marcus Kaestner; Andreas Schuh; Jens-Peter Zoellner; Manuel Hofer; Elshad Guliyev; Ahmad Ahmad; Tzvetan Ivanov; Ivo W. Rangelow

doi:10.1117/12.2012324

26 March 2013 0.1-nanometer resolution positioning stage for sub-10 nm scanning probe lithography

Nataliya Vorbringer-Doroshovets, Felix Balzer, Roland Fuessl, Eberhard Manske, Marcus Kaestner, Andreas Schuh, Jens-Peter Zoellner, Manuel Hofer, Elshad Guliyev, Ahmad Ahmad, Tzvetan Ivanov , Ivo W. Rangelow

Author Affiliations +

Proceedings Volume 8680, Alternative Lithographic Technologies V; 868018 (2013) https://doi.org/10.1117/12.2012324
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

High Performance Single Nanometer Lithography (SNL) is an enabling technology for beyond CMOS and future nanoelectronics. To keep on with scaling down nanoelectronic components, novel instrumentation for nanometer precise placement, overlay alignment and measurement are an essential pre-requirement to realize Next Generation Lithography (NGL) systems. In particular, scanning probe based methods for surface modification and lithography are an emerging method for producing sub-10 nm features. In this study, we demonstrate nano-scale lithography using a scanning probe based method in combination with a Nanopositioning and Nanomeasuring Machine. The latter one has a measuring range of 25 mm x 25 mm x 5 mm, 0.1 nanometer resolution and outstanding nanometer accuracy. The basic concept consists of a special arrangement allowing Abbe error free measurements in all axes over the total scan range. Furthermore, the Nanopositioning and Nanomeasuring Machine is able to store the exact location that can be found again with an accuracy of less than 2.5 nanometers. This system is also predestinated for critical dimension, quality and overlay control. The integrated scanning probe lithography is based on electric-field-induced patterning of calixarene. As a result, repeated step response tests are presented in this paper.

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Nataliya Vorbringer-Doroshovets, Felix Balzer, Roland Fuessl, Eberhard Manske, Marcus Kaestner, Andreas Schuh, Jens-Peter Zoellner, Manuel Hofer, Elshad Guliyev, Ahmad Ahmad, Tzvetan Ivanov , and Ivo W. Rangelow "0.1-nanometer resolution positioning stage for sub-10 nm scanning probe lithography", Proc. SPIE 8680, Alternative Lithographic Technologies V, 868018 (26 March 2013); https://doi.org/10.1117/12.2012324

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