26 March 2013 0.1-nanometer resolution positioning stage for sub-10 nm scanning probe lithography
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High Performance Single Nanometer Lithography (SNL) is an enabling technology for beyond CMOS and future nanoelectronics. To keep on with scaling down nanoelectronic components, novel instrumentation for nanometer precise placement, overlay alignment and measurement are an essential pre-requirement to realize Next Generation Lithography (NGL) systems. In particular, scanning probe based methods for surface modification and lithography are an emerging method for producing sub-10 nm features. In this study, we demonstrate nano-scale lithography using a scanning probe based method in combination with a Nanopositioning and Nanomeasuring Machine. The latter one has a measuring range of 25 mm x 25 mm x 5 mm, 0.1 nanometer resolution and outstanding nanometer accuracy. The basic concept consists of a special arrangement allowing Abbe error free measurements in all axes over the total scan range. Furthermore, the Nanopositioning and Nanomeasuring Machine is able to store the exact location that can be found again with an accuracy of less than 2.5 nanometers. This system is also predestinated for critical dimension, quality and overlay control. The integrated scanning probe lithography is based on electric-field-induced patterning of calixarene. As a result, repeated step response tests are presented in this paper.
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Nataliya Vorbringer-Doroshovets, Nataliya Vorbringer-Doroshovets, Felix Balzer, Felix Balzer, Roland Fuessl, Roland Fuessl, Eberhard Manske, Eberhard Manske, Marcus Kaestner, Marcus Kaestner, Andreas Schuh, Andreas Schuh, Jens-Peter Zoellner, Jens-Peter Zoellner, Manuel Hofer, Manuel Hofer, Elshad Guliyev, Elshad Guliyev, Ahmad Ahmad, Ahmad Ahmad, Tzvetan Ivanov , Tzvetan Ivanov , Ivo W. Rangelow, Ivo W. Rangelow, "0.1-nanometer resolution positioning stage for sub-10 nm scanning probe lithography", Proc. SPIE 8680, Alternative Lithographic Technologies V, 868018 (26 March 2013); doi: 10.1117/12.2012324; https://doi.org/10.1117/12.2012324

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