26 March 2013 A dose modification strategy of electron beam direct writing considering TDDB reliability in LSI interconnects
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Abstract
As the feature size of LSI shrinks, the cost of mask manufacturing and turn-around-time continue to increase. Maskless lithography using electron beam direct writing (EBDW) technology attracts attention. On the other hands, with continuous scaling and the introduction of low-k dielectrics in Cu interconnect technology, time-dependent dielectric breakdown (TDDB) reliability has become one of important issues. Therefore, EBDW in backend process is needed to ensure superior patterning quality and TDDB reliability using high-accuracy proximity effect correction. In this paper, we propose an EBDW strategy for throughput enhancement considering reliability for TDDB degradation of LSI interconnects. Patterns with short and long TDDB degradation lifetime are drawn by fine and coarse dose adjustments, respectively. We applied the proposed method to a microprocessor layout synthesized with the Nangate 45nm Open Cell Library. As a result, the drawn pattern with coarse dose adjustment achieved 12.5% higher throughput than that of fine dose adjustment. The drawing error increased by only 6.5%.
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Yoshihiro Midoh, Atsushi Osaki, Koji Nakamae, "A dose modification strategy of electron beam direct writing considering TDDB reliability in LSI interconnects", Proc. SPIE 8680, Alternative Lithographic Technologies V, 86801B (26 March 2013); doi: 10.1117/12.2011694; https://doi.org/10.1117/12.2011694
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