Fabrication of 28nm pitch Si fins with DSA lithography

Gerard Schmid; Richard Farrell; Ji Xu; Chanro Park; Moshe Preil; Vidhya Chakrapani; Nihar Mohanty; Akiteru Ko; Michael Cicoria; David Hetzer; Mark Somervell; Benjamen Rathsack

doi:10.1117/12.2011607

26 March 2013 Fabrication of 28nm pitch Si fins with DSA lithography

Gerard Schmid, Richard Farrell, Ji Xu, Chanro Park, Moshe Preil, Vidhya Chakrapani, Nihar Mohanty, Akiteru Ko, Michael Cicoria, David Hetzer, Mark Somervell, Benjamen Rathsack

Author Affiliations +

Proceedings Volume 8680, Alternative Lithographic Technologies V; 86801F (2013) https://doi.org/10.1117/12.2011607
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

Directed Self-Assembly (DSA), as an extension of current state-of-the-art photolithography, has demonstrated the capability for patterning with resolution and cost effectiveness beyond the capability of other techniques. Previous studies of DSA have reported encouraging benchmarks in defect density and throughput capability for the patterning step, and such results provide a foundation for our ongoing efforts to integrate the DSA patterning step into a robust process for fabricating device layers. Here we provide a status report on the integration of two chemoepitaxy DSA patterning methods for the fabrication of 28nm pitch Si fin arrays. In addition to the requirements for a robust pattern transfer process, it is also important to understand the pattern design limitations that are associated with DSA. We discuss some of the challenges and opportunities associated with developing efficient device designs that take advantage of the capabilities of DSA.

Citation Download Citation

Gerard Schmid, Richard Farrell, Ji Xu, Chanro Park, Moshe Preil, Vidhya Chakrapani, Nihar Mohanty, Akiteru Ko, Michael Cicoria, David Hetzer, Mark Somervell, and Benjamen Rathsack "Fabrication of 28nm pitch Si fins with DSA lithography", Proc. SPIE 8680, Alternative Lithographic Technologies V, 86801F (26 March 2013); https://doi.org/10.1117/12.2011607

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