26 March 2013 Fabrication of 28nm pitch Si fins with DSA lithography
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Abstract
Directed Self-Assembly (DSA), as an extension of current state-of-the-art photolithography, has demonstrated the capability for patterning with resolution and cost effectiveness beyond the capability of other techniques. Previous studies of DSA have reported encouraging benchmarks in defect density and throughput capability for the patterning step, and such results provide a foundation for our ongoing efforts to integrate the DSA patterning step into a robust process for fabricating device layers. Here we provide a status report on the integration of two chemoepitaxy DSA patterning methods for the fabrication of 28nm pitch Si fin arrays. In addition to the requirements for a robust pattern transfer process, it is also important to understand the pattern design limitations that are associated with DSA. We discuss some of the challenges and opportunities associated with developing efficient device designs that take advantage of the capabilities of DSA.
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Gerard Schmid, Gerard Schmid, Richard Farrell, Richard Farrell, Ji Xu, Ji Xu, Chanro Park, Chanro Park, Moshe Preil, Moshe Preil, Vidhya Chakrapani, Vidhya Chakrapani, Nihar Mohanty, Nihar Mohanty, Akiteru Ko, Akiteru Ko, Michael Cicoria, Michael Cicoria, David Hetzer, David Hetzer, Mark Somervell, Mark Somervell, Benjamen Rathsack, Benjamen Rathsack, } "Fabrication of 28nm pitch Si fins with DSA lithography", Proc. SPIE 8680, Alternative Lithographic Technologies V, 86801F (26 March 2013); doi: 10.1117/12.2011607; https://doi.org/10.1117/12.2011607
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