26 March 2013 Directed self-assembly process implementation in a 300mm pilot line environment
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Abstract
The patterning capability of the directed self-assembly (DSA) of a 42nm-pitch block copolymer on an 84nm-pitch guiding pattern was investigated in a 300mm pilot line environment. The chemoepitaxy guiding pattern was created by the IBM Almaden approach using brush materials in combination with an optional chemical slimming of the resist lines. Critical dimension (CD) uniformity, line-edge/line-width roughness (LER/LWR), and lithographic process window (PW) of the DSA process were characterized. CD rectification and LWR reduction were observed. The chemical slimming process was found to be effective in reducing pattern collapse, hence, slightly improving the DSA PW under over-dose conditions. However, the overall PW was found to be smaller than without using the slimming, due to a new failure mode at under-dose region.
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Chi-Chun Liu, Chi-Chun Liu, I. Cristina Estrada-Raygoza, I. Cristina Estrada-Raygoza, Jassem Abdallah, Jassem Abdallah, Steven Holmes, Steven Holmes, Yunpeng Yin, Yunpeng Yin, Anthony Schepis, Anthony Schepis, Michael Cicoria, Michael Cicoria, David Hetzer, David Hetzer, Hsinyu Tsai, Hsinyu Tsai, Michael Guillorn, Michael Guillorn, Melia Tjio, Melia Tjio, Joy Cheng, Joy Cheng, Mark Somervell, Mark Somervell, Matthew Colburn, Matthew Colburn, } "Directed self-assembly process implementation in a 300mm pilot line environment", Proc. SPIE 8680, Alternative Lithographic Technologies V, 86801G (26 March 2013); doi: 10.1117/12.2011610; https://doi.org/10.1117/12.2011610
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