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26 March 2013 Using process monitor wafers to understand directed self-assembly defects
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As directed self-assembly (DSA) has gained momentum over the past few years, questions about its application to high volume manufacturing have arisen. One of the major concerns is about the fundamental limits of defectivity that can be attained with the technology. If DSA applications demonstrate defectivity that rivals of traditional lithographic technologies, the pathway to the cost benefits of the technology creates a very compelling case for its large scale implementation. To address this critical question, our team at IMEC has established a process monitor flow to track the defectivity behaviors of an exemplary chemo-epitaxy application for printing line/space patterns. Through establishing this baseline, we have been able to understand both traditional lithographic defect sources in new materials as well as new classes of assembly defects associated with DSA technology. Moreover, we have explored new materials and processing to lower the level of the defectivity baseline. The robustness of the material sets and process is investigated as well. In this paper, we will report the understandings learned from the IMEC DSA process monitor flow.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yi Cao, YoungJun Her, Paulina Rincon Delgadillo, Nadia Vandenbroeck, Roel Gronheid, Boon Teik Chan, Yukio Hashimoto, Ainhoa Romo, Mark Somervell, Kathleen Nafus, and Paul F. Nealey "Using process monitor wafers to understand directed self-assembly defects", Proc. SPIE 8680, Alternative Lithographic Technologies V, 86801S (26 March 2013);

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