PS-b-PAA as a high X polymer for directed self-assembly: a study of solvent and thermal annealing processes for PS-b-PAA

Jing Cheng; Richard A. Lawson; Wei-Ming Yeh; Nathan D. Jarnagin; Laren M. Tolbert; Clifford L. Henderson

doi:10.1117/12.2021414

5 April 2013 PS-b-PAA as a high χ polymer for directed self-assembly: a study of solvent and thermal annealing processes for PS-b-PAA

Jing Cheng, Richard A. Lawson, Wei-Ming Yeh, Nathan D. Jarnagin, Laren M. Tolbert, Clifford L. Henderson

Author Affiliations +

Proceedings Volume 8680, Alternative Lithographic Technologies V; 86801V (2013) https://doi.org/10.1117/12.2021414
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

Poly(styrene)-b-poly(acrylic acid) copolymers (PS-b-PAA) was shown to be one promising material for achieving substantially smaller pitch patterns than PS-b-PMMA while still retaining high etch contrast and application for chemoepitaxy. Phase separation of acetone vapor annealed PS-b-PAA (Mw=16,000 g/mol with 50:50 volume ratio of PS: PAA) on PS brush achieved a lamellar morphology with a pattern pitch size (L₀) of 30 nm. However the thermal annealing of the same PS-b-PAA generated a dramatically larger pitch size of 43 nm. SEM and GPC analysis revealed that the intermolecular crosslinking during thermal annealing process has increased the effective N (degree of polymerization), which suggests that even a small amount of crosslinking would lead to big pitch change. Thus, PS-b-PAA is not suitable for fast thermal annealing process as it loses pitch size control due to PAA crosslinking.

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Jing Cheng, Richard A. Lawson, Wei-Ming Yeh, Nathan D. Jarnagin, Laren M. Tolbert, and Clifford L. Henderson "PS-b-PAA as a high χ polymer for directed self-assembly: a study of solvent and thermal annealing processes for PS-b-PAA", Proc. SPIE 8680, Alternative Lithographic Technologies V, 86801V (5 April 2013); https://doi.org/10.1117/12.2021414

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