26 March 2013 Block co-polymer multiple patterning directed self-assembly on PS-OH brush layer and AFM based nanolithography
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Abstract
We present a method to direct the self-assembly of PS/PMMA block co-polymer by surface chemical modification using atomic force microscopy (AFM) based nanolithography. In our approach, a PS-OH brush layer is chemically modified by the AFM tip, creating a nanometer scale guiding pattern that induces the alignment of the block co-polymer. Compared to alternative procedures that involves electron beam or deep UV lithography, AFM nanolithography is a simpler process since it does not require the use of an additional resist processing step. In addition, AFM nanolithography presents the potential to define the guiding patterns with better control and resolution.
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Lorea Oria, Lorea Oria, Alaitz Ruiz de Luzuriaga, Alaitz Ruiz de Luzuriaga, Juan Antonio Alduncín, Juan Antonio Alduncín, Francesc Pérez-Murano, Francesc Pérez-Murano, } "Block co-polymer multiple patterning directed self-assembly on PS-OH brush layer and AFM based nanolithography", Proc. SPIE 8680, Alternative Lithographic Technologies V, 868022 (26 March 2013); doi: 10.1117/12.2014515; https://doi.org/10.1117/12.2014515
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