Proximity Effects in electron beam lithography impact feature dimensions, pattern fidelity and uniformity. Electron
scattering effects are commonly addressed using a mathematical model representing the radial exposure intensity
distribution induced by a point electron source, commonly named Point Spread Function (PSF). PSF models are usually
employed for correcting “short-range” and “long-range” backscattering effects up to 10μm to 15μm. It is well known
that there are also some process related phenomena impacting pattern uniformity that have a wider range (fogging,
chemical mechanical polishing -CMP- effects, etc.) which impacts up to a few millimeters or more. There are a number
of commercial strategies for mitigating such long range effects based on data density. However, those traditional ones
are usually performed within a single chip on a reticle field and ignore the presence of adjacent fields, neglecting their
Full field reticles can contain several different designs or arrayed chips in a multitude of layout placements. Reticle level
jobdeck placing each design at specific sites, independent of each other can be used to account for the density of each
pattern that has a relative impact on its neighbors, even if they are several millimeters away from offending data.
Therefore, full field density analysis accounting for scribe frames and all neighboring patterns is required for reaching
fidelity control requirements such as critical dimension (CD) and line end shortening (LES) on the full plate.
This paper describes a technique to compensate long range effects going across chip boundaries to the full reticle
exposure field. The extreme long range effects are also represented with a model that is calibrated according to the
characteristics of the user‟s process. Data correction can be based on dose and geometry modulation. Uniform pattern
dimensional control matching the user's specific process long range variability can be achieved with the techniques
described in this paper.