26 March 2013 Contrast enhanced exposure strategy in multi-beam mask writing
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Since multi electron beam exposure has become a serious contender for next generation mask making, proximity- and process effect corrections (PEC) need to be adapted to this technology. With feature sizes in the order of the short-range blurs (resist and tool), contrast enhancements need to be combined with standard linearity corrections. Different PEC strategies are reviewed and compared with respect to their suitability for multi-beam exposure. This analysis recommends a hybrid approach that combines the benefits of shape- and dose PEC and is optimally applicable for multibeam exposure. Exposure results on the proof-of-concept 50keV electron multi-beam mask exposure tool (eMET POC) and a standard 50 kV vector shaped beam tool (VSB) are shown to verify that the combined PEC with overdose contrast enhancement covers the whole pattern range from isolated to opaque.
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Nikola Belic, Nikola Belic, Ulrich Hofmann, Ulrich Hofmann, Jan Klikovits, Jan Klikovits, Stephan Martens, Stephan Martens, "Contrast enhanced exposure strategy in multi-beam mask writing", Proc. SPIE 8680, Alternative Lithographic Technologies V, 86802A (26 March 2013); doi: 10.1117/12.2014148; https://doi.org/10.1117/12.2014148

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