18 April 2013 High-volume process monitoring of FEOL 22nm FinFET structures using an automated STEM
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The automated metrology capabilities of a STEM using a commercially available 22nm microprocessor were evaluated. Artifact-free TEM samples with a thickness of 10-15nm were prepared from inverter structures at various locations within an SRAM array. Static and dynamic precision measurements made on fin and gate stack features show sub-nm precision, suggesting that fully automated STEM metrology on finFET devices is capable of supporting finFET production. This paper also discusses sample preparation, automated data acquisition and data analysis, as well as the throughput benefits that arise from hardware connectivity between the sample prep and data acquisition tools. Simultaneous STEM imaging and compositional analysis is also briefly discussed.
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Ozan Ugurlu, Ozan Ugurlu, Michael Strauss, Michael Strauss, Gavin Dutrow, Gavin Dutrow, Jeff Blackwood, Jeff Blackwood, Brian Routh, Brian Routh, Corey Senowitz, Corey Senowitz, Paul Plachinda, Paul Plachinda, Roger Alvis, Roger Alvis, } "High-volume process monitoring of FEOL 22nm FinFET structures using an automated STEM", Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 868107 (18 April 2013); doi: 10.1117/12.2011594; https://doi.org/10.1117/12.2011594

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