10 April 2013 Defect window analysis by using SEM-contour based shape quantifying method for sub-20nm node production
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Abstract
The impact on yield loss due to systematic defect which remains after Optical Proximity Correction (OPC) modeling has increased, and achieving an acceptable yield has become more difficult in the leading technology beyond 20 nm node production. Furthermore Process-Window has become narrow because of the complexity of IC design and less process margin. In the past, the systematic defects have been inspected by human-eyes. However the judgment by human-eyes is sometime unstable and not accurate. Moreover an enormous amount of time and labor will have to be expended on the one-by-one judgment for several thousands of hot-spot defects. In order to overcome these difficulties and improve the yield and manufacturability, the automated system, which can quantify the shape difference with high accuracy and speed, is needed. Inspection points could be increased for getting higher yield, if the automated system achieves our goal. Defect Window Analysis (DWA) system by using high-precision-contour extraction from SEM image on real silicon and quantifying method which can calculate the difference between defect pattern and non-defect pattern automatically, which was developed by Hitachi High-Technologies, has been applied to the defect judgment instead of the judgment by human-eyes. The DWA result which describes process behavior might be feedback to design or OPC or mask. This new methodology and evaluation results will be presented in detail in this paper.
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Daisuke Hibino, Daisuke Hibino, Mingyi Hsu, Mingyi Hsu, Hiroyuki Shindo, Hiroyuki Shindo, Masayuki Izawa, Masayuki Izawa, Yuji Enomoto, Yuji Enomoto, J. F. Lin, J. F. Lin, J. R. Hu, J. R. Hu, } "Defect window analysis by using SEM-contour based shape quantifying method for sub-20nm node production", Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 86810B (10 April 2013); doi: 10.1117/12.2010780; https://doi.org/10.1117/12.2010780
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