10 April 2013 22 nm node wafer inspection using diffraction phase microscopy and image post-processing
Author Affiliations +
Abstract
We applied epi-illumination diffraction phase microscopy to measure the amplitude and phase of the scattered field from a SEMATECH 22 nm node intentional defect array (IDA) wafer. We used several imaging processing techniques to remove the wafer’s underlying structure and reduce both the spatial and temporal noise and eliminate the system calibration error to produce stretched panoramic amplitude and phase images. From the stretched images, we detected defects down to 20 nm × 160 nm for a parallel bridge, 20 nm × 100 nm for perpendicular bridge, and 35 nm × 70 nm for an isolated dot.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Renjie Zhou, Renjie Zhou, Gabriel Popescu, Gabriel Popescu, Lynford L. Goddard, Lynford L. Goddard, } "22 nm node wafer inspection using diffraction phase microscopy and image post-processing", Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 86810G (10 April 2013); doi: 10.1117/12.2011216; https://doi.org/10.1117/12.2011216
PROCEEDINGS
7 PAGES


SHARE
Back to Top