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18 April 2013 Fin stress and pitch measurement using X-ray diffraction reciprocal space maps and optical scatterometry
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Although fin metrology presents many challenges, the single crystal nature of the fins also provides opportunities to use a combination of measurement methods to determine stress and pitch. While the diffraction of light during a scatterometry measurement is well known, X-ray diffraction from a field (array) of single crystal silicon fins can also provide important information. Since some fins have Si1-xGex alloys at the top of the fin, determination of the presence of stress relaxation is another critical aspect of fin characterization. Theoretical studies predict that the bi-axially stressed crystal structure of pseudomorphic alloy films will be altered by the fin structure. For example, one expects it will be different along the length of the fin vs the width. Reciprocal space map (RSM) characterization can provide a window in the stress state of fins as well as measure pitch walking and other structural information. In this paper, we describe the fundamentals of how RSMs can be used to characterize the pitch of an array of fins as well as the stress state. We describe how this impacts the optical properties used in scatterometry measurement.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. C. Diebold, M. Medikonda, G. R. Muthinti, V. K. Kamineni, J. Fronheiser, M. Wormington, B. Peterson, and J. Race "Fin stress and pitch measurement using X-ray diffraction reciprocal space maps and optical scatterometry", Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 86810I (18 April 2013);

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