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10 April 2013 Scatterometry evaluation of focus-dose effects of EUV structures
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Abstract
CD and shape control of extreme ultraviolet lithography (EUVL) structures is critical to ensure patterning performance at the 10 nm technology node and beyond. The optimum focus/dose control by EUV scanner is critical for CD uniformity, and the scanner depends on reliable and rapid metrology feedback to maintain control. The latest advances in scatterometry such as ellipsometry (SE), reflectometry (NISR), and Mueller matrix (MM) offers complete pattern profile, critical dimensions (CD), side-wall angles, and dimensional characterization. In this study, we will present the evaluation results of CD uniformity and focus dose sensitivity of line and space EUV structures at the limit of current ASML NXE 3100 scanner printability and complex 3D EUV structures. The results will include static and dynamic precision and CD-SEM correlation data.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Prasad Dasari, Oleg Kritsun, Jie Li, Catherine Volkman, Jiangtao Hu, and Zhuan Liu "Scatterometry evaluation of focus-dose effects of EUV structures", Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 86810T (10 April 2013); https://doi.org/10.1117/12.2012120
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