Control of inspection for EUV substrates and mask blanks

Milton Godwin; Teki Ranganath; Andy Ma

doi:10.1117/12.2010819

Translator Disclaimer

18 April 2013 Control of inspection for EUV substrates and mask blanks

Proceedings Volume 8681, Metrology, Inspection, and Process Control for Microlithography XXVII; 868112 (2013) https://doi.org/10.1117/12.2010819
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

Defect inspection of EUV substrates and mask blanks must be controlled consistently to ensure repeatable and accurate defect counts. Initial sensitivity must be maintained without producing false counts. Various constructed and native defect monitors are created on substrates to track inspection tool performance. Remedies are applied to an inspection tool when monitors go out of control.

Citation Download Citation

Milton Godwin, Teki Ranganath, and Andy Ma "Control of inspection for EUV substrates and mask blanks", Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 868112 (18 April 2013); https://doi.org/10.1117/12.2010819

ACCESS THE FULL ARTICLE