10 April 2013 Scatterometry-based dose and focus decorrelation: applications to 28nm contact holes patterning intrafield focus investigations
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Abstract
We introduced a simple method based on scatterometry measurement performed on dense contact holes matrix to investigate intrafield focus deviation on 28nm FDSOI real production wafers at contact holes patterning lithography operation. A complex three-dimensional scatterometry model with all patterned resist geometrical parameters left as degree of freedom. Then simple linear relationships between patterned resist geometrical parameters on the one hand, and applied dose and focus offset on the other hand were used to determine a focus and dose decorrelation model. This model was then used to investigate the effect of ASML AGILETM scanner option on intrafield focus deviation. A significant 16% intrafield focus standard deviation improvement was found with AGILETM, which validated our method and shows the possibilities of AGILETM option for intrafield focus control. This focus investigation method may be used to improve advanced CMOS manufacturing process control.
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B. Orlando, B. Orlando, N. Spaziani, N. Spaziani, N. Socquet, N. Socquet, R. Bouyssou, R. Bouyssou, M. Gatefait, M. Gatefait, P.J. Goirand, P.J. Goirand, } "Scatterometry-based dose and focus decorrelation: applications to 28nm contact holes patterning intrafield focus investigations", Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 868118 (10 April 2013); doi: 10.1117/12.2011122; https://doi.org/10.1117/12.2011122
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