18 April 2013 DSA hole defectivity analysis using advanced optical inspection tool
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Abstract
This paper discusses the defect density detection and analysis methodology using advanced optical wafer inspection capability to enable accelerated development of a DSA process/process tools and the required inspection capability to monitor such a process. The defectivity inspection methodologies are optimized for grapho epitaxy directed self-assembly (DSA) contact holes with 25 nm sizes. A defect test reticle with programmed defects on guide patterns is designed for improved optimization of defectivity monitoring. Using this reticle, resist guide holes with a variety of sizes and shapes are patterned using an ArF immersion scanner. The negative tone development (NTD) type thermally stable resist guide is used for DSA of a polystyrene-b-poly(methyl methacrylate) (PS-b-PMMA) block copolymer (BCP). Using a variety of defects intentionally made by changing guide pattern sizes, the detection rates of each specific defectivity type has been analyzed. It is found in this work that to maximize sensitivity, a two pass scan with bright field (BF) and dark field (DF) modes provides the best overall defect type coverage and sensitivity. The performance of the two pass scan with BF and DF modes is also revealed by defect analysis for baseline defectivity on a wafer processed with nominal process conditions.
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Ryota Harukawa, Ryota Harukawa, Masami Aoki, Masami Aoki, Andrew Cross, Andrew Cross, Venkat Nagaswami, Venkat Nagaswami, Tadatoshi Tomita, Tadatoshi Tomita, Seiji Nagahara, Seiji Nagahara, Makoto Muramatsu, Makoto Muramatsu, Shinichiro Kawakami, Shinichiro Kawakami, Hitoshi Kosugi, Hitoshi Kosugi, Benjamen Rathsack, Benjamen Rathsack, Takahiro Kitano, Takahiro Kitano, Jason Sweis, Jason Sweis, Ali Mokhberi, Ali Mokhberi, } "DSA hole defectivity analysis using advanced optical inspection tool", Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 86811A (18 April 2013); doi: 10.1117/12.2011177; https://doi.org/10.1117/12.2011177
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