10 April 2013 Optical analysis on the wafer defect inspection for yield enhancement
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Abstract
This paper presents a methodology for detecting defects more effectively that have a substantial yield impact on several critical layers using a simulation program, which is considerably helpful in analyzing defects on the wafer. First, this paper presents a simple analysis method that uses mathematical treatment for multi thin film layers. This instantly gives us a highly intuitive idea for selecting an inspection mode based on the reflectivity and transmittivity. Second, we introduce numerical method for wafer defect of interest with finite difference time domain (FDTD) method, and provide correlation between the expectation and experimental results. The goal of these studies is to determine the feasibility of implementing theoretical approaches with numerical method at wafer defect inspection. Overall, this paper discusses the effective wafer inspection methodology and the advantages of defect simulation with numerical analysis at semiconductor manufacturing for accelerated development of advanced design node devices.
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Jeongho Ahn, Byoungho Lee, Dong-Ryul Lee, Shijin Seong, Hyungseop Kim, Seongchae Choi, Heewon Sunwoo, Junbum Lee, Dongchul Ihm, Soobok Chin, Ho-Kyu Kang, "Optical analysis on the wafer defect inspection for yield enhancement", Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 86811E (10 April 2013); doi: 10.1117/12.2011387; https://doi.org/10.1117/12.2011387
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