10 April 2013 SEM-contour shape analysis method for advanced semiconductor devices
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Abstract
The new measuring method that we developed executes a contour shape analysis that is based on the pattern edge information from a SEM image. This analysis helps to create a highly precise quantification of every circuit pattern shape by comparing the contour extracted from the SEM image using a CD measurement algorithm and the ideal circuit pattern. The developed method, in the next phase, can generate four shape indices by using the analysis mass measurement data. When the shape index measured using the developed method is compared the CD, the difference of the shape index and the CD is negligibly small for the quantification of the circuit pattern shape. In addition, when the 2D patterns on a FEM wafer are measured using the developed method, the tendency for shape deformations is precisely caught by the four shape indices. This new method and the evaluation results will be presented in detail in this paper.
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Yasutaka Toyoda, Yasutaka Toyoda, Hiroyuki Shindo, Hiroyuki Shindo, Yoshihiro Ota, Yoshihiro Ota, Ryoichi Matsuoka, Ryoichi Matsuoka, Yutaka Hojo, Yutaka Hojo, Daisuke Fuchimoto, Daisuke Fuchimoto, Daisuke Hibino, Daisuke Hibino, Hideo Sakai, Hideo Sakai, } "SEM-contour shape analysis method for advanced semiconductor devices", Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 86811K (10 April 2013); doi: 10.1117/12.2011459; https://doi.org/10.1117/12.2011459
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