10 April 2013 Lithography focus/exposure control and corrections to improve CDU
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Proceedings Volume 8681, Metrology, Inspection, and Process Control for Microlithography XXVII; 86811P (2013); doi: 10.1117/12.2011534
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States
Abstract
As leading edge lithography moves to advanced nodes which requires better critical dimension (CD) control ability within wafer. Current methods generally make exposure corrections by field via factory automation or by sub-recipe to improve CD uniformity. KLA-Tencor has developed a method to provide CD uniformity (CDU) control using a generated Focus/Exposure (F/E) model from a representative process. Exposure corrections by each field can be applied back to the scanner so as to improve CD uniformity through the factory automation. CDU improvement can be observed either at after lithography or after etch metrology steps. In addition to corrections, the graphic K-T Analyzer interface also facilitates the focus/exposure monitoring at the extreme wafer edge. This paper will explain the KT CDFE method and the application in production environment. Run to run focus/exposure monitoring will be carried out both on monitoring and production wafers to control the wafer process and/or scanner fleet. CDU improvement opportunities will be considered as well.
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Young Ki Kim, Mark Yelverton, Joungchel Lee, Jerry Cheng, Hong Wei, Jeong Soo Kim, Karsten Gutjahr, Jie Gao, Ram Karur-Shanmugam, Pedro Herrera, Kevin Huang, Roie Volkovich, Bill Pierson, "Lithography focus/exposure control and corrections to improve CDU", Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 86811P (10 April 2013); doi: 10.1117/12.2011534; https://doi.org/10.1117/12.2011534
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KEYWORDS
Semiconducting wafers

Finite element methods

Lithography

Scatterometry

Critical dimension metrology

Scanners

Factory automation

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