Towards development of a sidewall roughness standard

Aaron Cordes; Ben Bunday; Sean Hand; Jason Osborne; Hugh Porter

doi:10.1117/12.2012066

10 April 2013 Towards development of a sidewall roughness standard

Aaron Cordes, Ben Bunday, Sean Hand, Jason Osborne, Hugh Porter

Proceedings Volume 8681, Metrology, Inspection, and Process Control for Microlithography XXVII; 86812J (2013) https://doi.org/10.1117/12.2012066
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

With the advent of FinFETs, precise control of sidewall roughness (SWR) has taken on a new importance in semiconductor manufacturing. The sidewall of the fin is the largest area of contact between the gate and channel. Controlling this contact requires precise and accurate metrology, which in turn requires calibration. Developing a calibration standard for sidewall roughness is therefore vital. This paper describes initial work towards creating such a standard, by demonstrating mutually supporting reference metrology on a patterned roughness feature. To create the standard, photoresist features were patterned using a programmed and controlled line edge roughness (LER). Initial roughness data was obtained by critical dimension atomic force microscopy (CD-AFM), a conformal film was then deposited to provide contrast for transmission electron microscopy (TEM), and full 3D roughness information across the entire sidewall was acquired by TEM tomography. The following serves as proof of concept for using these two measurements to check each other, moving towards development of a usable sidewall roughness standard.

Citation Download Citation

Aaron Cordes, Ben Bunday, Sean Hand, Jason Osborne, and Hugh Porter "Towards development of a sidewall roughness standard", Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 86812J (10 April 2013); https://doi.org/10.1117/12.2012066

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KEYWORDS

Standards development

Tomography

Transmission electron microscopy

Calibration

Metrology

3D metrology

Atomic force microscopy

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