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18 April 2013 Key points to measure accurately an ultra-low LER by using CD-SEM
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Abstract
Metrology of line-edge roughness (LER) or line-width roughness (LWR) reduced less than a few nanometers in recent advanced-process is one of issues because measured LER is strongly dependent on measurement conditions such as magnification and beam dose. It may happen that different organizations measure different LERs on an identical sample. By using an ultra-low LER sample we demonstrate intolerable change of measured LER between with and without necessary key-points in the measurement conditions of critical-dimension secondary electron microscope (CD-SEM).
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Hiroki Kawada, Takahiro Kawasaki, Toru Ikegami, Norio Hasegawa, Kenichi Oyama, and Hedetami Yaegashi "Key points to measure accurately an ultra-low LER by using CD-SEM", Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 86812N (18 April 2013); https://doi.org/10.1117/12.2013494
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