18 April 2013 Diffraction based overlay and image based overlay on production flow for advanced technology node
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One of the main challenges for lithography step is the overlay control. For the advanced technology node like 28nm and 14nm, the overlay budget becomes very tight. Two overlay techniques compete in our advanced semiconductor manufacturing: the Diffraction based Overlay (DBO) with the YieldStar S200 (ASML) and the Image Based Overlay (IBO) with ARCHER (KLA). In this paper we will compare these two methods through 3 critical production layers: Poly Gate, Contact and first metal layer. We will show the overlay results of the 2 techniques, explore the accuracy and compare the total measurement uncertainty (TMU) for the standard overlay targets of both techniques. We will see also the response and impact for the Image Based Overlay and Diffraction Based Overlay techniques through a process change like an additional Hardmask TEOS layer on the front-end stack. The importance of the target design is approached; we will propose more adapted design for image based targets. Finally we will present embedded targets in the 14 FDSOI with first results.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoann Blancquaert, Yoann Blancquaert, Christophe Dezauzier, Christophe Dezauzier, "Diffraction based overlay and image based overlay on production flow for advanced technology node", Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 86812O (18 April 2013); doi: 10.1117/12.2011498; https://doi.org/10.1117/12.2011498


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