10 April 2013 Fundamentals of overlay measurement and inspection using scanning electron-microscope
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Abstract
Scanning electron-microscope (SEM) has been successfully applied to CD measurement as promising tools for qualifying and controlling quality of semiconductor devices in in-line manufacturing process since 1985. Furthermore SEM is proposed to be applied to in-die overlay monitor in the local area which is too small to be measured by optical overlay measurement tools any more, when the overlay control limit is going to be stringent and have un-ignorable dependence on device pattern layout, in-die location, and singular locations in wafer edge, etc. In this paper, we proposed new overlay measurement and inspection system to make an effective use of in-line SEM image, in consideration of trade-off between measurement uncertainty and measurement pattern density in each SEM conditions. In parallel, we make it clear that the best hybrid overlay metrology is in considering each tool’s technology portfolio.
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T. Kato, T. Kato, Y. Okagawa, Y. Okagawa, O. Inoue, O. Inoue, K. Arai, K. Arai, S. Yamaguchi, S. Yamaguchi, } "Fundamentals of overlay measurement and inspection using scanning electron-microscope", Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 86812Q (10 April 2013); doi: 10.1117/12.2011046; https://doi.org/10.1117/12.2011046
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