18 April 2013 High-speed atomic force microscopy for patterned defect review
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This paper reports recent progress in using Atomic Force Microscopy as a defect review tool for patterned wafers. The key developments in the AFM technology are substantial scan speed improvements and the ability to reach feature bottom-CDs in a narrow trench. The latter is accomplished by controlling the tip-sample interaction via the short-range interaction force. Narrow trenches with vertical side wall angles comparable to current FinFET dimensions were imaged using the AFM, where imaging speeds for this sample reached about 0.2 frames per second, providing quantified topographic data for key features of the trenches. The sub-10 nm resolution data of high speed AFM demonstrates the technology as a viable solution for defect review.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jason Osborne, Jason Osborne, Shuiqing Hu, Shuiqing Hu, Haiming Wang, Haiming Wang, Yan Hu, Yan Hu, Jian Shi, Jian Shi, Sean Hand, Sean Hand, Chanmin Su, Chanmin Su, "High-speed atomic force microscopy for patterned defect review", Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 86813C (18 April 2013); doi: 10.1117/12.2011665; https://doi.org/10.1117/12.2011665


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